[Ifeffit] Give me some advices

wang.kefan at gmail.com wang.kefan at gmail.com
Mon Dec 17 20:35:25 CST 2007

Hi  Leandro
Thank you for your helpful advices. The title should be change to "Please
give me some advices" , and I am sorry for this error.

*The attached .prj file can be opened by Athena rightly by changing the
download file's extend name .bin  to .prj, if someone else want to join our

Then go to our topics:

The QDs samples were prepared by MBE and XAFS measurements, as you guessed,
were performed at a synchrotron facility in fluorescence mode. Since the
Si/Ge intermixing happened frequently during growth, there is certainly Si
in so-called Ge quantum dots(QDs, or nanocrystal). However, now I am very
caring for if the GeOx in the QDs. The XAFS spectra show that there may be
GeOx in the Ge QDs, but since the QDs were covered *in situ* by a 15nm Si
cap layer the oxidizing process of QDs by air should not happen. This
inconsistency between XAFS and experiments is the real reason for that I
want to extract the truth from strict softwae analysis.

1, I have the bulk Ge and diluted SiGe standard spectra, but they do not
resemble with these spectra as you mentioned. I am sure that the QDs is a
combination of Ge and Si elements, and am not clear if the O exists. The
growth temperature is beyond 500oC, and annealing was performed from
550-800oC(all temperature uncalibrated with +/- 50oC ). The amorphous
Ge seems to be impossible, but can not exclude it. *In situ* RHEED also can
not tell me if the deposited Ge is crystallizing.

2, If I truncate the k to 10 A-1, the fit result is accepted or not?

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