[Ifeffit] Increase NOVP error message meaning
Paul Fons
paul-fons at aist.go.jp
Sun Jan 23 08:53:14 CST 2005
I am trying to run feff on some chalcogenide structures that have
rather nearest-neighbor long bond lengths, e.g.
> Bond search from target site: Te1
> ...found 6 atoms within 0.00 - 3.20 A of this site
>
> ------------------------
> dist [Å] atoms
> ------------------------
> 1. 3.0488 6
> ------------------------
> Bond search complete
When I use this structure in feff82, I get the rather mysterious error
INCREASE NOVP:
>
> Calculating potentials ...
> free atom potential and density for atom type 0
> free atom potential and density for atom type 1
> free atom potential and density for atom type 2
> free atom potential and density for atom type 3
> initial state energy
> overlapped potential and density for unique potential 0
> overlapped potential and density for unique potential 1
> overlapped potential and density for unique potential 2
> overlapped potential and density for unique potential 3
> muffin tin radii and interstitial parameters
> tell authors to INCREASE NOVP
Being an experimentalist, I did increase novp until the previous error
message stopped, however this resulted in a core dump:
> Calculating potentials ...
> free atom potential and density for atom type 0
> free atom potential and density for atom type 1
> free atom potential and density for atom type 2
> free atom potential and density for atom type 3
> initial state energy
> overlapped potential and density for unique potential 0
> overlapped potential and density for unique potential 1
> overlapped potential and density for unique potential 2
> overlapped potential and density for unique potential 3
> muffin tin radii and interstitial parameters
> iph, rnrm(iph)*bohr, rmt(iph)*bohr, folp(iph)
> 0 1.76126E+00 1.74898E+00 1.01667E+00
> 1 1.71891E+00 1.63874E+00 1.12886E+00
> 2 1.35785E+00 8.69242E-01 1.15000E+00
> 3 1.78418E+00 1.76792E+00 1.02193E+00
> mu_old= nan
> Done with module 1: potentials.
> Calculating LDOS ...
> LDOS calculation for specified grid
> Calculating energy and space dependent l-DOS.
> It takes time ...
> potential type 0
> Segmentation fault (core dumped)
When running the equivalent file in feff6, I get the
> Calculating potentials and phases...
> free atom potential and density for atom type 0
> free atom potential and density for atom type 1
> free atom potential and density for atom type 2
> free atom potential and density for atom type 3
> overlapped potential and density for unique potential 0
> overlapped potential and density for unique potential 1
> overlapped potential and density for unique potential 2
> overlapped potential and density for unique potential 3
> muffin tin radii and interstitial parameters
> phase shifts for unique potential 0
> Hard tests failed in fovrg.
> Muffin-tin radius may be too large; coordination number too small.
> phase shifts for unique potential 1
> Hard tests failed in fovrg.
> Muffin-tin radius may be too large; coordination number too small.
> phase shifts for unique potential 2
> Hard tests failed in fovrg.
> Muffin-tin radius may be too large; coordination number too small.
> phase shifts for unique potential 3
> Hard tests failed in fovrg.
> Muffin-tin radius may be too large; coordination number too small.
> Preparing plane wave scattering amplitudes...
> nncrit in prcrit 9
This message seems similar to the troubleshooting section in feff8 for
which it states:
• Non-physical, widely spaced distributions of atoms. Symptoms of this
common problem are very large muffin-tin radii (see the header of any
‘.dat’ file) and possibly a failure of the phase-shift program to
converge. This gives error message hard test fails in fovrg.
How to I avoid this problem (obviously the crystal structure is a
given!). I tried the INTERSTITIAL card, but to no avail. Any
suggestions are welcome.
Dr. Paul Fons
Senior Researcher
National Institute for Advanced Industrial Science & Technology
METI
Center for Applied Near-Field Optics Research (CANFOR)
AIST Central 4, Higashi 1-1-1
Tsukuba, Ibaraki JAPAN 305-8568
tel. +81-298-61-5636
fax. +81-298-61-2939
email: paul-fons at aist.go.jp
The lines below are in a Japanese font
〒305−8568
茨城県つくば市東1−1−1
つくば中央第4
近接場光応用工学センター
ポール・フォンス主任研究官
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