Dear All,
 
I am studying the local disorder caused in CoGa alloy (B2: CsCl structure) due to ball-milling; it is expected that Ga atoms substitute most of the Co atoms in the Co sublattice after prolonged milling. In order to model this "anti-site" disorder (occupation of Ga atoms on the Co sites) in ATOMS, I am considering to change the occupancies at the corresponding sites as given below:
 
Before ball-milling:
 
site a: occupancy of Ga = 1
site b: occupancy of Co = 1
 
(standard .cif data)
 
After ball-milling (assuming 80% anti-site concentration):
 
site a: occupancy of Ga = 0.2 (plus compensating vacancies)
site b: occupancy of Co = 0.2
site b: occupancy of Ga = 0.8
 
Could anyone suggest if this approach is reasonable. 
 
Many thanks ...
 
Regards,
 
Shashwat